The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 1997
Filed:
Sep. 01, 1995
Applicant:
Inventors:
Chwen-Ming Liu, Hsinchu, TW;
Jenn-Ming Huang, Hsinchu, TW;
Hsien-Wei Chin, Hsin Chu, TW;
Huan-Chung You, Hsin-Chu, TW;
Jang-Cheng Hsieh, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 / ; 437 27 ; 437247 ; 148D / ;
Abstract
A method is provided for improving the performance characteristics of the MOS devices contained within an integrated circuit that has been subjected to a rapid thermal anneal. After the rapid thermal anneal the integrated circuit is heated for more than about 30 minutes at a temperature of more than about 430.degree. C. in a gaseous atmosphere that contains hydrogen, typically forming gas.