The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2000
Filed:
Aug. 16, 1999
Jenn-Ming Huang, Hsin-Chu, TW;
Jin Yuan Lee, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A process enabling high density, DRAM semiconductor chips to be achieved, via formation of DRAM cells, in SOI segments, has been developed. The process features the formation of an SOI layer, propagating from a central node region of a semiconductor substrate, exposed in an opening in an insulator layer, and with the SOI layer extending, and overlying, a portion of the insulator layer, at a distance between about 4 to 5 um, from the central node region. Individual SOI segments are then formed via trimming of the SOI layer, via oxidation of unwanted regions of the SOI layer, followed by removal of these oxidized regions. The DRAM cell, at an area between about 0.28 to 0.32 um.sup.2 is next formed in the individual SOI segments.