Jeng Shwang-Ming

Title: Jeng Shwang-Ming: Innovator in Copper Metallization

Introduction

Jeng Shwang-Ming is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, particularly in the area of copper metallization. His innovative approach addresses critical challenges in the industry.

Latest Patents

Jeng Shwang-Ming holds a patent for a solution to the problem of copper hillocks. This patent describes a new method of reducing copper hillocks in copper metallization. The process involves creating an opening through a dielectric layer overlying a substrate on a wafer. A copper layer is then formed over the dielectric layer, completely filling the opening. The copper layer is polished back to leave the copper layer only within the opening. To reduce copper hillocks, an oxide layer is coated over the copper layer and the dielectric layer. The wafer is then heated using NH plasma, followed by the deposition of a capping layer over the oxide layer. Notably, the time lapse between polishing back the copper layer and depositing the capping layer is less than one day (24 hours). This innovative method has the potential to enhance the reliability and performance of semiconductor devices.

Career Highlights

Jeng Shwang-Ming is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading player in the semiconductor industry. His work has contributed to advancements in manufacturing processes and has positioned him as a key figure in his field.

Collaborations

Jeng has collaborated with esteemed colleagues such as Kuen-Chyr Lee and Tien-I Bao. Their joint efforts have furthered research and development in semiconductor technologies.

Conclusion

Jeng Shwang-Ming's contributions to the field of copper metallization exemplify the importance of innovation in semiconductor manufacturing. His patented method for reducing copper hillocks showcases his expertise and commitment to advancing technology.