The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2004
Filed:
Oct. 31, 2001
Tien-I Bao, Hsin-chu, TW;
Jeng Shwang-Ming, Hsin-chu, TW;
Syun-Ming Jang, Hsin-Chu, TW;
Chen-Hua Yu, Hsin-chu, TW;
Kuen-Chyr Lee, Hsin-chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A new method of reducing copper hillocks in copper metallization is described. An opening is made through a dielectric layer overlying a substrate on a wafer. A copper layer is formed overlying the dielectric layer and completely filling the opening. The copper layer is polished back to leave the copper layer only within the opening. Copper hillocks are reduced by: coating an oxide layer over the copper layer and the dielectric layer, thereafter heating the wafer using NH plasma, and thereafter depositing a capping layer overlying the oxide layer wherein the time lapse between polishing back the copper layer and depositing the capping layer is less than one day (24 hours).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile