Jeffrey L Libbert

Title: Jeffrey L. Libbert: Semiconductor Wafer Manufacturing Innovation

Introduction

Jeffrey L. Libbert is an inventor associated with O’Fallon, Missouri, and GlobalWafers Co., Ltd. His patent work concerns methods for manufacturing semiconductor-on-insulator wafers, with particular attention to controlling stress in charge-trapping layers.

Latest Patents

Libbert is named on one patent: “Methods of Manufacturing Semiconductor-on-Insulator Wafers Having Charge Trapping Layers with Controlled Stress.” The disclosed method prepares a multilayer structure using a single-crystal semiconductor handle substrate with a minimum bulk-region resistivity of at least about 500 ohm-centimeters. It deposits a semiconductor layer on the substrate through two or more cycles, interrupting deposition after each portion so that the deposited material can be annealed.

Career Highlights

The patent reflects Libbert’s contribution to semiconductor wafer manufacturing processes. Its approach combines controlled deposition and intermediate annealing to address stress in multilayer wafer structures.

Collaborations

Libbert’s listed coworkers include Charles R. Lottes and Qingmin Liu. The patent identifies their work in the context of semiconductor-on-insulator wafer manufacturing.

Conclusion

Jeffrey L. Libbert’s recorded patent contribution focuses on a staged deposition and annealing method for preparing semiconductor wafers with controlled stress, and his patent portfolio includes 1 patent.