Jeffrey E Hanrahan

Title: **Innovator Spotlight: Jeffrey E. Hanrahan**

Introduction

Jeffrey E. Hanrahan, a prominent inventor based in Burlington, Vermont, has made significant contributions to the field of semiconductor technology. With a focus on enhancing circuit applications, Hanrahan holds two patents that showcase his innovative approach to improving device performance.

Latest Patents

One of Hanrahan's notable patents is for a **High Linearity SOI Wafer for Low-Distortion Circuit Applications**. This invention outlines a method whereby a first side of a substrate is implanted with a material that alters its crystalline structure, transitioning it from a first crystalline state to a second crystalline state. Following this, a second material is deposited on the substrate, and subsequently, an insulator layer is bonded to it. Integrated circuit devices are then formed on the opposite side of the insulator layer, and these devices undergo thermal annealing. The innovation lies in the first material's ability to maintain the new crystalline state throughout the annealing process, ensuring high linearity and minimal distortion.

Career Highlights

Throughout his career, Hanrahan has garnered experience at prestigious companies such as IBM and Globalfoundries Inc. His contributions were instrumental in advancing semiconductor technologies, and his work continues to influence circuit design practices today.

Collaborations

In his professional journey, Hanrahan has collaborated with talented individuals including Alan Bernard Botula and Mark David Jaffe. These partnerships have enriched his projects and have played a role in the development of his patents.

Conclusion

Jeffrey E. Hanrahan stands out as an innovator with a clear vision for enhancing semiconductor applications. His patented technologies reflect his dedication to the field and continue to have a lasting impact on the industry.