The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Jun. 28, 2013
International Business Machines Corporation, Armonk, NY (US);
Alan B. Botula, Essex Junction, VT (US);
Jeffrey E. Hanrahan, Burlington, VT (US);
Mark D. Jaffe, Shelburne, VT (US);
Alvin J. Joseph, Williston, VT (US);
Dale W. Martin, Hyde Park, VT (US);
Gerd Pfeiffer, Poughquag, NY (US);
James A. Slinkman, Montpelier, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
According to a method herein, a first side of a substrate is implanted with a first material to change a crystalline structure of the first side of the substrate from a first crystalline state to a second crystalline state, after the first material is implanted. A second material is deposited on the first side of the substrate, after the first material is implanted. A first side of an insulator layer is bonded to the second material on the first side of the substrate. Integrated circuit devices are formed on a second side of the insulator layer, opposite the first side of the insulator layer, after the insulator layer is bonded to the second material. The integrated circuit devices are thermally annealed. The first material maintains the second crystalline state of the first side of the substrate during the annealing.