International Business Machines Corporation

Globalfoundries Inc.

Jeffrey E Hanrahan

Mark David Jaffe

Alvin Jose Joseph

James Albert Slinkman

Alan Bernard Botula

Dale Warner Martin

Gerd Pfeiffer

According to a method herein, a first side of a substrate is implanted with a first material to change a crystalline structure of the first side of the substrate from a first crystalline state to a second crystalline state, after the first material is implanted. A second material is deposited on the first side of the substrate, after the first material is implanted. A first side of an insulator layer is bonded to the second material on the first side of the substrate. Integrated circuit devices are formed on a second side of the insulator layer, opposite the first side of the insulator layer, after the insulator layer is bonded to the second material. The integrated circuit devices are thermally annealed. The first material maintains the second crystalline state of the first side of the substrate during the annealing.

High linearity SOI wafer for low-distortion circuit applications

Growing community of inventors

Burlington, VT, United States of America

Jeffrey E Hanrahan