Jean Rottner

Title: Innovations of Jean Rottner in Semiconductor Technology

Introduction

Jean Rottner is a notable inventor based in Grenoble, France. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his expertise and innovative spirit. His work focuses on advanced methods for producing semiconductor components and optoelectronic devices.

Latest Patents

Rottner's latest patents include a "Process for producing a semiconductor component based on a III-N compound." This patent describes a method of manufacturing a semiconductor component that involves several steps, including the provision of a stack with a first semiconductor layer made of a III-N compound and a second conductive layer. The process also details the formation of a trench that crosses the second layer and stops on the first layer, which laterally delimits a contact metallization in the second layer.

Another significant patent is for an "Optoelectronic device with PN junction and trench gate." This invention includes a vertical stack of semiconductor layers forming a PN junction, along with a conductive layer arranged on top. The design features a peripheral trench that crosses the layers, which laterally delimits portions of the conductive and semiconductor layers, enhancing the device's functionality.

Career Highlights

Jean Rottner is affiliated with the Commissariat à l'Énergie Atomique et aux Énergies Alternatives, a prominent research institution in France. His work at this institution has allowed him to explore and develop innovative solutions in semiconductor technology.

Collaborations

Rottner collaborates with Helge Haas, contributing to advancements in their field through shared expertise and innovative projects.

Conclusion

Jean Rottner's contributions to semiconductor technology through his patents reflect his commitment to innovation and excellence. His work continues to influence the development of advanced electronic devices.