The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2024

Filed:

Dec. 18, 2019
Applicant:

Commissariat À L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Jean Rottner, Grenoble, FR;

Helge Haas, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/0095 (2013.01); H01L 33/62 (2013.01);
Abstract

The present description concerns an optoelectronic device () including: a vertical stack of first () and second () semiconductor layers forming a PN junction, and of a third conductive layer () arranged on top of and in contact with the surface of the second layer opposite to the first layer; a peripheral trench () crossing the third () and second () layers, said trench laterally delimiting a portion of the third layer () and a portion of the second layer (); in said trench (), a conductive spacer () in contact with a lateral side of said portion of the third layer (); and in said trench (), an insulated conductive gate () extending against a lateral side of the conductive spacer () and against a lateral side of said portion of the second layer.


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