Quaix-en-Chartreuse, France

Jean Du Port De Poncharra

This inventor holds 4 USPTO granted patents and 1 EPO patent. Top assignees: Commissariat a L'energie Atomique Et Aux Energies Alternatives, Other. Active years: 1987-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jean Du Port De Poncharra. Retrieved from https://idiyas.com/inventor/jean-du-port-de-poncharra

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 50.0

 

Average Co-Inventor Count = 2.3

ph-index = 2

Forward Citations = 90(Granted Patents)


Location History:

  • St. Martin-Le-Vinoux, FR (1987)
  • Quaix-en-Chartreuse, FR (2002 - 2006)
  • Quaix En Chartreuse, FR (2013)

Company Filing History:


Years Active: 1987-2013

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4 patents (USPTO):Explore Patents

Title: Innovating Semiconductor Insulation: The Contributions of Jean du Port de Poncharra

Introduction

Jean du Port de Poncharra is a notable inventor based in St. Martin-Le-Vinoux, France. With an impressive patent to his name, he has made significant contributions to the field of semiconductor technology. His work focuses on improving the insulation layers in semiconductor substrates, which is crucial for enhancing the performance of electronic devices.

Latest Patents

Jean du Port de Poncharra holds a patent entitled "Process for producing an insulating layer buried in a semiconductor." This patent describes an innovative method for creating a buried insulating layer in a semiconductor substrate through ion implantation. The process involves applying a mask to the substrate regions where the active zones are located. Oxygen or nitrogen ions are then implanted into the substrate through this mask, resulting in the formation of a continuous oxide or nitride insulating layer buried beneath the substrate surface. Furthermore, the method includes an optional annealing step to reinforce the continuity of the insulating layer by facilitating lateral diffusion of implanted ions.

Career Highlights

Jean is currently affiliated with the Commissariat à l'énergie atomique, a prominent research institution in France. His expertise and focus on semiconductor technology have positioned him as an important figure in the field. With one patent to his name, he showcases both innovation and a strong understanding of the complexities involved in semiconductor processes.

Collaborations

Throughout his career, Jean du Port de Poncharra has collaborated with Michel Bruel, a likely peer or coworker who shares In the same field of research. Such collaborations often lead to the sharing of ideas and advancements in technology, further emphasizing the importance of teamwork in innovation.

Conclusion

Jean du Port de Poncharra stands out as an influential inventor within the semiconductor industry. His patented process for producing insulating layers demonstrates his commitment to advancing technology and enhancing device performance. As he continues his work at the Commissariat à l'énergie atomique, his contributions may pave the way for future innovations in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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