The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2006
Filed:
Sep. 02, 2003
Jean-pierre Rostaing, La Côte Saint Andre, FR;
Patrick Villard, Grenoble, FR;
Jean Du Port DE Poncharra, Quaix-en-Chartreuse, FR;
Patrice Ouvrier-buffet, Saint-Jorioz, FR;
Jean-Pierre Rostaing, La Côte Saint Andre, FR;
Patrick Villard, Grenoble, FR;
Jean Du Port De Poncharra, Quaix-en-Chartreuse, FR;
Patrice Ouvrier-Buffet, Saint-Jorioz, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
A charge pump including n cells in series, each cell comprising a shift capacitor (Cdi) and a storage capacitor (Cmi), respectively having a shift parasitic capacitor (Cpi) and a storage parasitic capacitor (Cqi). The presence of the parasitic capacitors (Cpi, Cqi) leads to a loss of charge transmitted to the cell. Each cell comprises charge injection means (Cdinji, Cminji) for partially or totally compensating, or even overcompensating, the lost charge quantity. The charge pump may be implemented in silicon-on-insulator technology.