The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Dec. 29, 1999
Applicant:
Inventors:
Alain Chantre, Seyssins, FR;
Jean Du Port De Poncharra, Quaix-en-Chartreuse, FR;
Assignee:
Other;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18222 ;
U.S. Cl.
CPC ...
H01L 2/18222 ;
Abstract
A bipolar transistor including an extrinsic base on the surface of a silicon substrate covered by a first layer of doped polycrystalline silicon, an intrinsic base that is separated from the extrinsic base and covered by a second layer of polycrystalline silicon that constitutes the emitter and that is insulated from the first layer of polycrystalline silicon, and a link base that links the extrinsic base to the intrinsic base. The link base is located under the first layer of doped polycrystalline silicon.
Quick Actions:
Chantre, Alain. (2002). Method for making hyperfrequency transistor (U.S. Patent No. 6403437). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6403437
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile