Company Filing History:
Years Active: 2014-2020
Title: Innovations by Jean-Baptiste Laloe
Introduction
Jean-Baptiste Laloe is a notable inventor based in Saratoga Springs, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on improving the performance of semiconductor devices, particularly those utilizing metal gates.
Latest Patents
One of his latest patents is a method for forming a metal gate that includes the de-oxidation of an oxidized surface of the metal gate utilizing a reducing agent. This invention relates to approaches for forming a semiconductor device, such as a field-effect transistor (FET), with enhanced performance. The method involves forming a metal gate on a substrate, where further processing can lead to unwanted oxidation. By using a reducing agent, the metal surface can be de-oxidized, resulting in a substantially non-oxidized surface.
Another significant patent involves depositing an etch stop layer before a dummy cap layer to improve gate performance. This improved method for fabricating a semiconductor device includes several steps: depositing a dielectric layer on a substrate, followed by a first cap layer on the dielectric layer, an etch stop layer on the dielectric layer, and finally a dummy cap layer on the etch stop layer to create a partial gate structure. This invention also provides a partially formed semiconductor device that includes these layers.
Career Highlights
Jean-Baptiste Laloe is currently employed at GlobalFoundries Inc., where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, particularly in the area of metal gate fabrication.
Collaborations
He has collaborated with notable coworkers, including Huang Liu and Wonwoo Kim, contributing to the development of cutting-edge technologies in the semiconductor industry.
Conclusion
Jean-Baptiste Laloe's contributions to semiconductor technology through his innovative patents demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of high-performance semiconductor devices.
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