The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Mar. 19, 2014
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Huang Liu, Mechanicville, NY (US);
Wen-Pin Peng, Clifton Park, NY (US);
Jean-Baptiste Laloe, Saratoga Springs, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/312 (2006.01); H01L 21/321 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01); H01L 29/417 (2006.01); H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/321 (2013.01); H01L 21/02063 (2013.01); H01L 21/02074 (2013.01); H01L 21/76814 (2013.01); H01L 21/76823 (2013.01); H01L 21/823828 (2013.01); H01L 21/823878 (2013.01); H01L 27/092 (2013.01); H01L 29/41783 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/78 (2013.01);
Abstract
Aspects of the present invention relate to approaches for forming a semiconductor device such as a field-effect-transistor (FET) having a metal gate with improved performance. A metal gate is formed on a substrate in the semiconductor device. Further processing can result in unwanted oxidation in the metal that forms the metal gate. A reducing agent can be used to de-oxidize the metal that forms the metal gate, leaving a substantially non-oxidized surface.