Company Filing History:

7 out of 3,345

At&t Bell Laboratories

patents

4 out of 9,364

Lucent Technologies Inc.

Years Active: 1990-1999

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14 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 5879997 - Method for forming self aligned polysilicon contact (1999-03-09),

2. 5679589 - FET with gate spacer (1997-10-21),

3. 5656510 - Method for manufacturing gate oxide capacitors including wafer backside (1997-08-12),

4. 5559360 - Inductor for high frequency circuits (1996-09-24),

5. 5488248 - Memory integrated circuit (1996-01-30),

6. 5470783 - Method for integrated circuit device isolation (1995-11-28),

7. 5462888 - Process for manufacturing semiconductor BICMOS device (1995-10-31),

8. 5353245 - Memory integrated circuit with balanced resistance (1994-10-04),

9. 5334541 - Method of fabricating an integrated circuit with lines of critical width (1994-08-02),

10. 5153145 - FET with gate spacer (1992-10-06),

11. 5128738 - Integrated circuit (1992-07-07),

12. 5002898 - Integrated-circuit device isolation (1991-03-26),

13. 4999317 - Metallization processing (1991-03-12),

14. 4935376 - Making silicide gate level runners (1990-06-19),

Certainly! Here is the article about inventor Janmye Sung:

Title: The Innovative Spirit of Janmye Sung: Pioneering Technological Advancements in Lower Macungie Township

Introduction:

Janmye Sung is a prolific inventor hailing from Lower Macungie Township, Lehigh County, PA. With an impressive portfolio of 14 patents to his name, Sung has made significant contributions to the field of semiconductor technology and integrated circuit fabrication.

Latest Patents:

1. *Method for forming self-aligned polysilicon contact*: Sung's groundbreaking invention involves opening a gate contact to a field effect transistor by forming polysilicon plugs between the gate structure and field oxide regions. This method optimizes the oxidation rates of different materials, ensuring precise contact formation without exposing the silicon plug.

2. *FET with gate spacer*: Sung's innovative semiconductor integrated circuit structure features FET gates with double or triple layered gate spacers. These spacers enable tailored doping profiles for drain junctions and the formation of self-aligned silicide connections for enhanced contact resistance.

Career Highlights:

A trailblazer in the industry, Janmye Sung has held positions at renowned companies such as AT&T Bell Laboratories and Lucent Technologies Inc. His expertise in semiconductor technology and fabrication processes has led to the development of cutting-edge solutions in the field.

Collaborations:

Throughout his career, Sung has collaborated with esteemed professionals such as Kuo-Hua Lee and Chih-Yuan Lu. Together, they have worked on projects that have pushed the boundaries of innovation and reshaped the landscape of semiconductor technology.

Conclusion:

In conclusion, Janmye Sung stands as a beacon of innovation in the realm of semiconductor technology. His relentless pursuit of excellence and commitment to pushing the boundaries of what is possible have cemented his legacy as a visionary inventor in Lower Macungie Township, Lehigh County, PA.

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Inventor’s Patent Attorneys refers to legal professionals with specialized expertise in representing inventors throughout the patent process. These attorneys assist inventors in navigating the complexities of patent law, including filing patent applications, conducting patent searches, and protecting intellectual property rights. They play a crucial role in helping inventors secure patents for their innovative creations.