The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 1997
Filed:
Nov. 22, 1994
Applicant:
Inventors:
Terry Chrapacz, Topton, PA (US);
Kenneth Gordon Moerschel, Bethlehem, PA (US);
William A Possanza, Northampton, PA (US);
Michael Allen Prozonic, Germansville, PA (US);
Janmye Sung, Lower Macungie Township, Lehigh County, PA (US);
Assignee:
Lucent Technologies Inc., Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438394 ; 438476 ; 438516 ; 438791 ; 438928 ;
Abstract
A method is provided for optimizing the manufacturing yield of semiconductors. The method provides a backside dielectric layer which protects the semiconductor from electro-static discharge damage during manufacturing. The backside dielectric layer may be a nitride. The backside dielectric layer may be an oxide. The method also provides for optimized ion implantation flood gun current control.