Topton, PA, United States of America

Terry Chrapacz


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 1997

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1 patent (USPTO):Explore Patents

Title: The Innovations of Terry Chrapacz

Introduction

Terry Chrapacz is an accomplished inventor based in Topton, PA (US). She has made significant contributions to the field of semiconductor manufacturing. Her innovative approach has led to the development of a unique method that enhances the production yield of semiconductors.

Latest Patents

Terry holds a patent for a "Method for manufacturing gate oxide capacitors including wafer backside." This method optimizes the manufacturing yield of semiconductors by providing a backside dielectric layer that protects the semiconductor from electro-static discharge damage during manufacturing. The dielectric layer can be made of nitride or oxide, and the method also includes optimized ion implantation flood gun current control. Terry's patent is a testament to her expertise and innovative thinking in the semiconductor industry. She has 1 patent to her name.

Career Highlights

Terry has worked at Lucent Technologies Inc., where she has been able to apply her knowledge and skills in semiconductor manufacturing. Her work has contributed to advancements in the industry, showcasing her dedication to innovation and excellence.

Collaborations

Terry has collaborated with notable colleagues, including Kenneth Gordon Moerschel and William A Possanza. These partnerships have allowed her to further enhance her work and contribute to the field of semiconductor technology.

Conclusion

Terry Chrapacz is a pioneering inventor whose contributions to semiconductor manufacturing have made a lasting impact. Her innovative methods and dedication to her work continue to inspire others in the field.

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