Jérôme Alieu

**Title: Innovative Contributions of Jérôme Alieu in Semiconductor Technology**

Introduction

Jérôme Alieu, an accomplished inventor based in Isle d'Abeau, France, has made significant strides in the field of semiconductor technology. With a total of two patents to his name, his innovative work focuses primarily on MOSFET transistors, which are pivotal in modern electronics.

Latest Patents

One of his most notable patents is for a *MOSFET transistor with short channel effect compensated by the gate material*. This invention involves a MOSFET transistor featuring a gate made of a silicon-germanium alloy, strategically formed on a single crystal silicon substrate with a thin insulating layer. The unique aspect of this design is that the gate comprises side regions with an increasing germanium percentage, effectively compensating for the short channel effect by locally decreasing the work function of the gate material near the drain and source regions.

Another groundbreaking patent is for a *transistor with indium-implanted SiGe alloy and processes for fabricating the same*. This enables the creation of an indium-implanted transistor with a silicon channel region that includes a buried layer of SiGe alloy. The fabrication process is also detailed, involving the production of a multilayer composite film on a silicon substrate, ultimately resulting in a transistor that showcases enhanced performance due to its innovative channel structure.

Career Highlights

Jérôme Alieu currently works at STMicroelectronics, a leader in semiconductor technology. His role allows him to explore and push the boundaries of electronic component design, particularly through his patented creations. His contributions are vital to the ongoing evolution of microelectronics, impacting various applications from consumer electronics to industrial systems.

Collaborations

In his professional journey, Jérôme collaborates with esteemed colleagues such as Caroline Hernandez and Michel Haond. Their shared expertise helps foster a creative environment where groundbreaking ideas can flourish, enhancing the potential for future innovations in the semiconductor industry.

Conclusion

Jérôme Alieu's contributions to the field of semiconductor technology, specifically through his patents related to MOSFET transistors, exemplify the spirit of innovation and dedication to advancing electronic components. His work at STMicroelectronics not only highlights his individual achievements but also underscores the collaborative efforts that drive technological progress in the industry.