Jamin F Fen

Title: Jamin F Fen: Innovator in Semiconductor Technology

Introduction

Jamin F Fen is a notable inventor based in Wappingers Falls, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on improving the reliability and efficiency of transistor fabrication processes.

Latest Patents

One of Jamin's latest patents is titled "Double anneal with improved reliability for dual contact etch stop liner scheme." This innovative method involves forming a device with both PFET and NFET transistors using a PFET compressive etch stop liner and a NFET tensile etch stop liner. The process includes two anneals in a deuterium-containing atmosphere. The method begins with providing a NFET transistor in a NFET region and a PFET transistor in a PFET region. A NFET tensile contact etch-stop liner is formed over the NFET region, followed by a first deuterium anneal. Subsequently, a PFET compressive etch stop liner is formed over the PFET region, along with an ILD dielectric layer that has contact openings over the substrate. Finally, a second deuterium anneal is performed, with the temperature of the second anneal being less than that of the first.

Career Highlights

Throughout his career, Jamin has worked with prominent companies in the semiconductor industry, including IBM and Globalfoundries Singapore Pte. Ltd. His experience in these organizations has allowed him to develop and refine his innovative techniques in semiconductor manufacturing.

Collaborations

Jamin has collaborated with several talented individuals in his field, including Khee Yong Lim and Victor Chan. Their combined expertise has contributed to the advancement of semiconductor technologies.

Conclusion

Jamin F Fen is a distinguished inventor whose work in semiconductor technology has led to significant advancements in the field. His innovative methods and collaborations continue to influence the industry positively.