This inventor holds 1 USPTO granted patent. Top assignee: Cree Gmbh. Active years: 2013.
Company Filing History:
Years Active: 2013
Title: James Ibbotson: Innovator in Light Emitting Diode Technology
Introduction
James Ibbotson is a notable inventor based in Santa Barbara, California. He has made significant contributions to the field of semiconductor technology, particularly in the development of light emitting diodes (LEDs). His innovative work has led to the creation of a patented technology that enhances the efficiency and performance of LED structures.
Latest Patents
James Ibbotson holds a patent for "Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses." This patent describes a Group III nitride based light emitting diode that includes a p-type Group III nitride based semiconductor layer and an n-type Group III nitride based semiconductor layer, forming a P-N junction. The active region of the diode consists of sequentially stacked Group III nitride based wells with varying thicknesses, which improves the overall performance of the LED.
Career Highlights
James Ibbotson is currently employed at Cree GmbH, a company known for its advancements in LED technology and semiconductor solutions. His work at Cree GmbH has allowed him to further develop his innovative ideas and contribute to the company's success in the industry.
Collaborations
James has collaborated with talented individuals such as Ashonita Chavan and Daniel Carleton Driscoll. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.
Conclusion
James Ibbotson is a prominent figure in the field of light emitting diode technology, with a patent that showcases his innovative approach to semiconductor design. His contributions continue to influence the industry and pave the way for future advancements in LED technology.