The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Feb. 03, 2010
Michael John Bergmann, Chapel Hill, NC (US);
Daniel Carleton Driscoll, Raleigh, NC (US);
Ashonita Chavan, Raleigh, NC (US);
Pablo Cantu-alejandro, Raleigh, NC (US);
James Ibbotson, Santa Barbara, CA (US);
Michael John Bergmann, Chapel Hill, NC (US);
Daniel Carleton Driscoll, Raleigh, NC (US);
Ashonita Chavan, Raleigh, NC (US);
Pablo Cantu-Alejandro, Raleigh, NC (US);
James Ibbotson, Santa Barbara, CA (US);
Cree, Inc., Durham, NC (US);
Abstract
A Group III nitride based light emitting diode includes a p-type Group III nitride based semiconductor layer, an n-type Group III nitride based semiconductor layer that forms a P-N junction with the p-type Group III nitride based semiconductor layer, and a Group III nitride based active region on the n-type Group III nitride based semiconductor layer. The active region includes a plurality of sequentially stacked Group III nitride based wells including respective well layers. The plurality of well layers includes a first well layer having a first thickness and a second well layer having a second thickness. The second well layer is between the P-N junction and the first well layer, and the second thickness is greater than the first thickness.