Cree Gmbh

James Ibbotson

Michael John Bergmann

Daniel Carleton Driscoll

Ashonita Chavan

Pablo Cantu-Alejandro

A Group III nitride based light emitting diode includes a p-type Group III nitride based semiconductor layer, an n-type Group III nitride based semiconductor layer that forms a P-N junction with the p-type Group III nitride based semiconductor layer, and a Group III nitride based active region on the n-type Group III nitride based semiconductor layer. The active region includes a plurality of sequentially stacked Group III nitride based wells including respective well layers. The plurality of well layers includes a first well layer having a first thickness and a second well layer having a second thickness. The second well layer is between the P-N junction and the first well layer, and the second thickness is greater than the first thickness.

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Santa Barbara, CA, United States of America

James Ibbotson