San Jose, CA, United States of America

James H Tsung


Average Co-Inventor Count = 4.7

ph-index = 6

Forward Citations = 114(Granted Patents)


Company Filing History:


Years Active: 2001-2010

where 'Filed Patents' based on already Granted Patents

8 patents (USPTO):

Title: Innovator Spotlight: James H Tsung - Pioneering Innovations in Magnetron Technology.

Introduction:

James H Tsung, a prolific inventor in San Jose, CA, has made significant contributions to the field of magnetron technology. With a total of 8 patents to his name, Tsung's work at Applied Materials, Inc. has revolutionized the way we approach plasma sputtering.

Latest Patents:

1. Small Scanned Magnetron: Tsung's innovation involves a small magnet assembly that scans in a retrograde planetary path around the back of a target during plasma sputtering. This method ensures full target coverage by adjusting the rotation ratios around the respective axes, resulting in more efficient magnet velocity distribution.

2. Magnetron Executing Planetary Motion: Another notable patent by Tsung introduces a geared planetary mechanism for magnet assembly movement during plasma sputtering. This mechanism enables comprehensive target coverage with varying magnet velocities, ultimately enhancing the sputtering process.

Career Highlights:

Tsung's career at Applied Materials, Inc. is marked by a dedication to pushing the boundaries of magnetron technology. His inventive spirit and expertise have led to the development of cutting-edge solutions that have reshaped the industry's approach to plasma sputtering.

Collaborations:

Tsung has collaborated closely with industry peers such as Peijun Ding and Ilyoung R Hong. Together, they have worked on refining magnetron technologies and exploring new avenues for improving plasma sputtering processes.

Conclusion:

James H Tsung's pioneering work in magnetron technology underscores his commitment to innovation and excellence. Through his patents and collaborations, Tsung has left an indelible mark on the field, shaping the future of plasma sputtering technology.

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