Pflugerville, TX, United States of America

James Gordon Boyd

USPTO Granted Patents = 3 

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2009-2025

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3 patents (USPTO):Explore Patents

Title: James Gordon Boyd: Innovator in Semiconductor Technology

Introduction

James Gordon Boyd, a distinguished inventor based in Pflugerville, Texas, has made significant contributions to the field of semiconductor technology. With a total of two patents credited to his name, Boyd's innovative work continues to shape advancements in electronics and semiconductor manufacturing.

Latest Patents

Boyd's latest inventions include the "Deep Trench Isolation and Substrate Connection on SOI" and the "Recessed Poly Extension T-Gate". The first patent describes an apparatus that features a first trench formed within a semiconductor layer, which is crucial for enhancing isolation and substrate connections. The second patent outlines a method for creating a silicided gate in a semiconductor device, emphasizing the importance of gate structure in modern electronics.

Career Highlights

Throughout his career, James Gordon Boyd has worked for notable companies in the semiconductor industry, such as Freescale Semiconductor, Inc. and NXP USA, Inc. His expertise and innovative mindset have played a pivotal role in the development of advanced semiconductor components, demonstrating his commitment to technological progress.

Collaborations

Boyd has collaborated with talented professionals like Zhihong Zhang and Ronghua Zhu. Their combined efforts and knowledge have contributed to groundbreaking advancements in semiconductor technologies, further establishing Boyd's reputation within the industry.

Conclusion

James Gordon Boyd's contributions to semiconductor technology through his patents exemplify his innovative spirit and dedication to advancing the field. As technology continues to evolve, Boyd's work will undoubtedly leave a lasting impact on the industry.

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