Nxp USA, Inc.

Freescale Semiconductor,inc.

James Gordon Boyd

Ronghua Zhu

Xin Lin

Zhihong Zhang

Xu Cheng

Jan Claes

Todd Roggenbauer

Jianhua He

In one embodiment, a semiconductor die includes a polycrystalline semiconductor resistor structure (poly resistor structure). The poly resistor structure includes a resistive path between a first terminal and a second terminal. The poly resistor structure includes a first region having a net first conductivity type dopant concentration located in the resistance path and a second region having a net second conductivity type dopant concentration located in the resistance path. A silicide structure is located on both a first portion of the first region and a first portion of the second region to electrically connect the first portion of the first region and the first portion of the second region. In some embodiments, poly resistor structures with different conductivity type regions can be connected together.

Polycrystalline semiconductor resistor

An apparatus includes a first trench formed in a semiconductor layer. The first trench has a first width and a first depth. A second trench is formed in the semiconductor layer. The second trench has a second width and a second depth. The first width is wider than the second width. A buried dielectric layer is disposed between a bottom semiconductor surface of the semiconductor layer and a substrate. The buried dielectric layer contacts a first bottom surface of the first trench. A liner dielectric is formed on the first bottom surface and a first sidewall of the first trench. A first layer is formed on the liner dielectric. A second layer is formed on the first layer and extends to the substrate through an opening formed on the first bottom surface.

Deep trench isolation and substrate connection on SOI

A method is provided for making a silicided gate in a semiconductor device. In accordance with the method, a gate () is provided which comprises a first portion () and a second portion (). The first portion of the gate has a width wand the second portion of the gate has a width was taken along a plane perpendicular to the length of the gate, wherein w&#x3e;w. A layer is silicide () is then formed on the second portion.

Recessed poly extension T-gate

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Pflugerville, TX, United States of America

James Gordon Boyd