James D Goon

Title: Innovations of James D. Goon

Introduction

James D. Goon is a notable inventor based in Dallas, Texas. He has made significant contributions to the field of integrated circuit technology. With a total of three patents to his name, Goon's work focuses on optimizing manufacturing processes and enhancing circuit design.

Latest Patents

One of Goon's latest patents is a method for optimizing the integrated circuit chip size for efficient manufacturing. This invention examines various chip-to-wafer offsets and arrangements of reticle exposures to optimize the number of good integrated circuit chips per wafer. By integrating shot map optimization with reticle layout generation, this system provides valuable insights into the impact of chip size on manufacturability.

Another significant patent is related to high voltage merged bipolar/CMOS technology. This integrated circuit design incorporates PMOS, NMOS, and NPN transistors, allowing for both digital and analog circuit applications. The design enables the use of standard CMOS cells without the need for redesign, enhancing versatility in circuit applications.

Career Highlights

James D. Goon is currently employed at Texas Instruments Corporation, a leading company in semiconductor design and manufacturing. His work at Texas Instruments has allowed him to contribute to advancements in integrated circuit technology.

Collaborations

Goon has collaborated with notable coworkers such as Louis N. Hutter and Shiu-Hang Yan. Their combined expertise has likely contributed to the innovative projects they have worked on together.

Conclusion

James D. Goon's contributions to integrated circuit technology through his patents and work at Texas Instruments Corporation highlight his role as an influential inventor in the field. His innovations continue to impact the efficiency and effectiveness of manufacturing processes in the semiconductor industry.