Taipei, Taiwan

James Cheng



Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: **James Cheng: Innovator in Non-volatile Memory Programming Technology**

Introduction

James Cheng, an inventive mind based in New Taipei, Taiwan, has made significant contributions to the field of memory technology. With a focus on developing efficient programming methods for non-volatile memory, James is recognized for his innovative approach that enhances data storage solutions.

Latest Patents

James holds a patent for a novel invention titled "Non-volatile memory program algorithm device and method." This invention details a sophisticated device and method designed for programming memory cells through repeated pulses of program voltages. It incorporates interleaved read operations to carefully assess the read current levels until the desired programming state is reached. The methodology entails incrementally increasing program voltages with each successive pulse, providing precision in programming single-level and multi-level memory cells.

Career Highlights

Currently, James is associated with Silicon Storage Technology, Inc., where he applies his expertise in non-volatile memory solutions. His innovative work is pivotal in advancing memory technology, thereby contributing to improved data retention and storage efficiency.

Collaborations

James collaborates with skilled professionals such as Xian Liu and Dmitry Bavinov, combining their talents to enhance the capabilities of memory technologies. Through teamwork, they strive to push the boundaries of innovation and deliver cutting-edge solutions in the tech industry.

Conclusion

James Cheng's work in non-volatile memory programming is a remarkable example of how a dedicated inventor can impact technology. His innovative patent demonstrates his commitment to enhancing memory devices, offering significant advantages in the realm of data storage. As technology continues to advance, James's contributions will likely play a crucial role in shaping the future of non-volatile memory solutions.

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