The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Mar. 14, 2014
Silicon Storage Technology, Inc., San Jose, CA (US);
Xian Liu, Sunnyvale, CA (US);
James Cheng, New Taipei, TW;
Dmitry Bavinov, Moscow, RU;
Alexander Kotov, San Jose, CA (US);
Jong-Won Yoo, Cupertino, CA (US);
Silicon Storage Technology, Inc., San Jose, CA (US);
Abstract
A non-volatile memory device and method for programming cells using repeated pulses of program voltages, with interleaved read operations to determine the level of read current, until the desired programming state is achieved. Each successive program pulse has one or more program voltages increased by a step value relative to the previous pulse. For a single level cell type, each cell is individually removed from the programming pulses after reaching a first read current threshold, and the step value is increased for one or more kicker pulses thereafter. For a multi-level cell type, the step value drops after one of the cells reaches a first read current threshold, some cells are individually removed from the programming pulses after reaching a second read current threshold while others are individually removed from the programming pulses after reaching a third read current threshold.