James August Ridenour

Title: The Innovative Contributions of James August Ridenour

Introduction

James August Ridenour is a notable inventor based in Arlington, VA, who has made significant contributions to the field of materials science. With a total of three patents to his name, Ridenour's work focuses on advanced methods for preparing crystalline materials and the deposition of nanoparticles.

Latest Patents

Ridenour's latest patents include a scalable method for preparing crystalline borosulfate materials. This innovative method avoids the use of fuming sulfuric acid, also known as oleum. Instead, it utilizes B(OH) present in concentrated sulfuric acid at 5% to 15% by weight, which is reacted with a cation source at temperatures ranging from 100 to 250° C under dynamic vacuum. This process allows for the formation of borosulfate material while collecting eliminated water in a separate receiving vessel containing a desiccant. Another significant patent involves the deposition of platinum nanoparticles on a series of UiO metal-organic frameworks. This is achieved through solvothermal reduction, where Pt acetylacetonate is reduced in a mixture of UiO-66 and N,N-dimethylformamide at approximately 130° C for 18 hours. The size of the Pt nanoparticles can be controlled by modifying the reaction temperature and time.

Career Highlights

Ridenour is currently associated with the United States Navy, where he contributes his expertise in materials science and innovation. His work has implications for various applications, particularly in the fields of chemistry and engineering.

Collaborations

Some of Ridenour's notable coworkers include Albert Epshteyn and Hannah Marie Ashberry, who collaborate with him on various projects and research initiatives.

Conclusion

James August Ridenour's innovative work in the preparation of crystalline materials and nanoparticle deposition showcases his significant contributions to science and technology. His patents reflect a commitment to advancing materials science and engineering.