Jai-Hoon Sim

Title: Jai-Hoon Sim: Semiconductor Device and DRAM Innovations.

Introduction

Jai-Hoon Sim is an inventor based in Kyungki-do, South Korea, whose patent work focuses on semiconductor device fabrication and memory technology. He is associated with Samsung Electronics Co., Ltd. His portfolio includes 8 patents.

Latest Patents

Sim’s recent patent work includes methods for fabricating semiconductor devices with different gate oxide layers. The method controls oxidation according to active-area dimensions, producing thinner oxide over wider active areas in peripheral regions and thicker oxide over narrower active areas in cell-array regions. The process forms gate patterns and spacers before applying dimension-dependent oxidation.

Another patent concerns methods for forming trench isolation regions with conductive shields. The disclosed DRAM cell transistor structure is designed to reduce narrow-channel effects and maintain threshold voltage independently of active width. A conductive shield in the shallow trench isolation region helps limit parasitic electric-field penetration from the gate and neighboring storage-node junctions. Applying a negative bias to the shield helps minimize sidewall depletion in the substrate.

Career Highlights

At Samsung Electronics, Sim’s patent contributions address challenges in scaling semiconductor devices and DRAM technology. His work includes approaches intended to support submicron isolation pitches and future high-density memory designs.

Collaborations

Sim’s listed coworkers include Kyu-Chan Lee and Ki-Nam Kim. Their shared association with Samsung Electronics reflects a collaborative environment focused on semiconductor research and development.

Conclusion

Jai-Hoon Sim’s patents demonstrate a focus on improving gate-oxide fabrication and trench-isolated DRAM transistor structures, contributing to the development of advanced semiconductor technology.