The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2000
Filed:
Jun. 09, 1999
Applicant:
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438430 ; 438435 ; 438221 ;
Abstract
Narrow-channel effect free DRAM cell transistor structure for submicron isolation pitch DRAMs having lowed-doped substrate and active width-independent threshold voltage by employing conductive shield in the shallow trench isolation(STI). The resulting cell transistor structure is highly immune to parasitic E-field penetration from the gate and neighbouring storage node junctions via STI and will be very appropriate for Gbit scale DRAM technology. The conductive shield is biased with the negative voltage in order to minimize the sidewall depletion in the substrate.