Chappaqua, NY, United States of America

Ivan Haller


Average Co-Inventor Count = 1.2

ph-index = 5

Forward Citations = 107(Granted Patents)


Company Filing History:


Years Active: 1976-1993

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5 patents (USPTO):Explore Patents

Title: Ivan Haller: Innovator in Thin Film Transistor Technology

Introduction

Ivan Haller is a notable inventor based in Chappaqua, NY (US). He has made significant contributions to the field of thin film transistor technology, holding a total of five patents. His work primarily focuses on improving the fabrication methods of amorphous silicon thin film devices.

Latest Patents

Haller's latest patents include an innovative structure and method for fabricating amorphous silicon thin film devices, particularly transistors. This improved design emphasizes the role of insulator films, which are selected to maximize the transmission of photolithographic active light through the structure. The insulator layers are strategically positioned on either side of the amorphous silicon layer, which serves as a light-absorbing element and acts as anti-reflective components. These layers are chosen to have a refractive index that differs from the substrate, with a thickness dimension that ensures destructive interference of the wave components of lithographically active light reflected at the interfaces of the completed structure.

Career Highlights

Haller is currently associated with the International Business Machines Corporation, commonly known as IBM. His work at IBM has allowed him to explore and develop advanced technologies in the field of electronics and materials science.

Collaborations

Throughout his career, Haller has collaborated with notable colleagues, including Ralph Feder and Michael Hatzakis. These collaborations have contributed to the advancement of technology in their respective fields.

Conclusion

Ivan Haller's contributions to the field of thin film transistors highlight his innovative spirit and dedication to advancing technology. His patents reflect a deep understanding of materials and their applications in modern electronics.

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