International Business Machines Corporation

Ivan Haller

Lubomyr Taras Romankiw

Michael Hatzakis

Eberhard A Spiller

Ralph Feder

An improved structure and method for fabricating amorphous silicon thin film devices, particularly transistors, is described. In addition to their usual role as gate insulator and optional capping layer, the insulator films are chosen to maximize the transmission of photolithographic active light through the structure. These layers are positioned to either side of the amorphous silicon layer which is a light absorbing layer to act as anti-reflective elements. The insulator layers are chosen to have a refractive index different than the substrate and a thickness dimension chosen so the wave components of said lithographically active light reflected at the interfaces of the completed structure interfere destructively.

Easily manufacturable thin film transistor structures

An improved structure and method for fabricating amorphous silicon thin film devices, particularly transistors, is described. In additiion to their usual role as gate insulator and optional capping layer, the insulator films are chosen to maximize the transmission of photolithographic active light through the structure. These layers are positioned to either side of the amorphous silicon layer which is a light absorbing layer to act as anti-reflective elements. The insulator layers are chosen to have a refractive index different than the substrate and a thickness dimension chosen so the wave components of said lithographically active light reflected at the interfaces of the completed structure interfere destructively.

A structure containing a substrate having a first hydrogenated amorphous silicon layer thereon and a second hydrogenated amorphous silicon layer located above the first layer. The two hydrogenated amorphous silicon layers differ from each other in the concentration of hydrogen contained therein. In addition, a process for fabricating such a structure is provided.

Structure containing hydrogenated amorphous silicon and process

Thermally stable electrically insulating polymers are obtained from aromatic silanes by low power, radio frequency glow discharge polymerization at elevated temperature and low vapor pressure.

Polymers from aromatic silanes and process for their preparation

A positive resist image is produced by exposing, to radiation in a predetermined pattern, a polymeric material containing polymerized alkyl methacrylate units and polymerized monoethylenically unsaturated acid units. The exposed and unexposed areas are distinguished by their different respective abilities to be swelled in an appropriate swelling agent, and the swelled areas are removed by dispersal in a nonsolvent liquid.

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Chappaqua, NY, United States of America

Ivan Haller