The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 1989
Filed:
Jan. 04, 1988
Ivan Haller, Chappaqua, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An improved structure and method for fabricating amorphous silicon thin film devices, particularly transistors, is described. In additiion to their usual role as gate insulator and optional capping layer, the insulator films are chosen to maximize the transmission of photolithographic active light through the structure. These layers are positioned to either side of the amorphous silicon layer which is a light absorbing layer to act as anti-reflective elements. The insulator layers are chosen to have a refractive index different than the substrate and a thickness dimension chosen so the wave components of said lithographically active light reflected at the interfaces of the completed structure interfere destructively.