Itaru Yanagi

Title: Itaru Yanagi: Innovator in Semiconductor Technology

Introduction

Itaru Yanagi is a prominent inventor based in Kunitachi, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on enhancing the efficiency and functionality of non-volatile memory devices.

Latest Patents

Yanagi's latest patents include advancements in semiconductor storage devices and their manufacturing methods. One notable patent describes a non-volatile memory where writing and erasing are achieved by altering the total charge amount through the injection of electrons and holes into a silicon nitride film. This film serves as a charge accumulation layer, which is crucial for the device's performance. The gate electrode of the memory cell features a laminated structure composed of multiple polysilicon films with varying impurity concentrations. Specifically, it includes a two-layered structure with a p-type polysilicon film of low impurity concentration and a p'-type polysilicon film of high impurity concentration. This innovative design aims to improve the efficiency of hole injection from the gate electrode into the charge accumulation layer.

Career Highlights

Throughout his career, Itaru Yanagi has worked with notable companies in the semiconductor industry, including Renesas Electronics Corporation and Renesas Technology Corporation. His expertise in semiconductor technology has positioned him as a key figure in the development of advanced memory solutions.

Collaborations

Yanagi has collaborated with esteemed colleagues such as Toshiyuki Mine and Hirotaka Hamamura. Their combined efforts have contributed to the advancement of semiconductor technologies and innovations.

Conclusion

Itaru Yanagi's contributions to semiconductor technology and his innovative patents have significantly impacted the field of non-volatile memory devices. His work continues to influence advancements in this critical area of technology.