The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Mar. 17, 2013
Renesas Electronics Corporation, Kawasaki, JP;
Itaru Yanagi, Kunitachi, JP;
Toshiyuki Mine, Fussa, JP;
Hirotaka Hamamura, Kodaira, JP;
Digh Hisamoto, Kokubunji, JP;
Yasuhiro Shimamoto, Tokorozawa, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
In a non-volatile memory, writing/erasing is performed by changing a total charge amount by injecting electrons and holes into a silicon nitride film, which serves as a charge accumulation layer. The gate electrode of a memory cell has a laminated structure made of a plurality of polysilicon films with different impurity concentrations. In a two-layered structure the gate electrode has a p-type polysilicon film with a low impurity concentration and a p-type polysilicon film with a high impurity concentration deposited thereon. Holes are injected into the charge accumulation layer from the gate electrode.