The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Aug. 28, 2015
Renesas Electronics Corporation, Tokyo, JP;
Itaru Yanagi, Kunitachi, JP;
Toshiyuki Mine, Fussa, JP;
Hirotaka Hamamura, Kodaira, JP;
Digh Hisamoto, Kokubunji, JP;
Yasuhiro Shimamoto, Tokorozawa, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
In a non-volatile memory in which writing/erasing is performed by changing a total charge amount by injecting electrons and holes into a silicon nitride film serving as a charge accumulation layer, in order to realize a high efficiency of a hole injection from a gate electrode, the gate electrode of a memory cell comprises a laminated structure made of a plurality of polysilicon films with different impurity concentrations, for example, a two-layered structure comprising a p-type polysilicon film with a low impurity concentration and a p'-type polysilicon film with a high impurity concentration deposited thereon.