Kamakura, Japan

Isao Obara


Average Co-Inventor Count = 4.8

ph-index = 4

Forward Citations = 73(Granted Patents)


Company Filing History:


Years Active: 1980-2001

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6 patents (USPTO):Explore Patents

Title: Isao Obara: Innovator in Semiconductor Technology

Introduction

Isao Obara is a prominent inventor based in Kamakura, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of surface-protecting films. With a total of 6 patents to his name, Obara's work has had a lasting impact on the industry.

Latest Patents

Obara's latest patents include innovative solutions for enhancing the durability of semiconductor devices. One of his notable inventions is a surface-protecting film designed to prevent peeling and cracking of the sealing member in resin-sealed semiconductor devices. This film is created by applying a polyimide precursor composition that undergoes heat-curing, ensuring the integrity of the semiconductor element. The composition features a recurring unit constitution represented by a specific general formula, which includes various organic groups that contribute to its effectiveness.

Career Highlights

Throughout his career, Isao Obara has worked with leading companies in the technology sector. He has been associated with Hitachi, Ltd. and Hitachi Chemical Company, Ltd., where he has contributed to various innovative projects. His expertise in semiconductor technology has positioned him as a key figure in the development of advanced materials.

Collaborations

Obara has collaborated with notable professionals in his field, including Fumio Kataoka and Fusaji Shoji. These partnerships have fostered a collaborative environment that has led to significant advancements in semiconductor technology.

Conclusion

Isao Obara's contributions to the field of semiconductor technology through his innovative patents and collaborations highlight his role as a leading inventor. His work continues to influence the industry, ensuring the reliability and performance of semiconductor devices.

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