Hitachi, Ltd.

Hitachi Chemical Company, Ltd.

Isao Obara

Fumio Kataoka

Hitoshi Yokono

Fusaji Shoji

Jun Tanaka

Tokio Isogai

Keiko Isoda

Haruhiko Kikkawa

Aizo Kaneda

Issei Takemoto

Mitsumasa Kojima

Akihiro Kenmotsu

Takeshi Komaru

Atsuya Kamada

Mitumasa Kojima

A surface-protecting film is formed on the surface of the semiconductor element of a resin-sealed semiconductor device to prevent the peeling and cracking of the sealing member used in said device, by coating on said surface a polyimide precursor composition containing a polyimide precursor having a recurring unit constitution represented by the following general formula (1) and heat-curing the coated polyimide precursor composition:

Surface-protecting film and resin-sealed semiconductor device having said film

A surface-protecting film is formed on the surface of the semiconductor element of a resin-sealed semiconductor device to prevent the peeling and cracking of the sealing member used in said device, by coating on said surface a polyimide precursor composition containing a polyimide precursor having a recurring unit constitution represented by the following general formula (1) and heat-curing the coated polyimide precursor composition: ##STR1## wherein R.sup.1 is a trivalent or tetravalent aromatic group; R.sup.2 and R.sup.3 are each a tetravalent organic group having 4 or more carbon atoms; R.sup.4 is a bivalent organic group having 4 or more carbon atoms; X is a bivalent organic group containing at least one member selected from the group consisting of oxygen and nitrogen: Y is a monovalent organic group having 15 or less carbon atoms; n=5-100 and m=0-95 with a proviso that n+m=100; and p is 1 or 2).

Surface-protecting film and resin-sealed semiconductor device having

A semiconductor device containing an .alpha.-rays shielding resin layer on at least active portion of a semiconductor element, said .alpha.-rays shielding resin being a special polyimide resin, is excellent in thermal resistance at the time of sealing the semiconductor element, adhesion of the .alpha.-rays shielding layer to the semiconductor element, and .alpha.-rays shielding ability.

Semiconductor device

A light-sensitive polymer composition comprising a poly(amic acid), a special bisazide compound and an amine compound can give a film which has high sensitivity and in which portions exposed to light are not easily released by a developing solution at the time of development.

Light-sensitive polymer composition with poly(amic acid), bisazide, and

A light- or radiation-sensitive polymer composition comprising (a) a poly(amic acid) having as a major component a repeating unit of the formula: ##STR1## (b) one or more light- or radiation-sensitive compounds having an amino group and an aromatic azide group or aromatic sulfonylazide group in one molecule, and if necessary (c) one or more photosensitizers and/or amine compounds having at least one unsaturated bonding, and/or (d) one or more compounds having at least two unsaturated bonding in one molecule, is highly sensitive to light and radiation and can give a precise relief pattern on a substrate. Further, a finally obtained polyimide film is excellent in heat resistance.

Radiation-sensitive poly(amic acid) polymer composition

A spider of loudspeaker having a base material in the form of a plain-woven fabric of warps and wefts each of which constituted by fibers of an inorganic material. The warps and wefts are coated with a thermosetting resin which in turn is coated with a thermoplastic resin. The spider thus formed is less liable to absorb the ambient moisture and, therefore, is free from distortion.

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Kamakura, Japan

Isao Obara