Company Filing History:
Years Active: 2015-2016
Title: Innovations by Isabelle Ferain
Introduction
Isabelle Ferain is a notable inventor based in Ballston Spa, NY (US). She has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. Her work focuses on improving the performance and reliability of transistor devices.
Latest Patents
One of her latest patents is titled "Stress memorization techniques for transistor devices." This patent discloses an illustrative method that includes performing a source/drain extension ion implantation to form a doped extension implant region in the source/drain regions of the device. It also involves performing an ion implantation process on the source/drain regions with a Group VII material, such as fluorine. After this process, a capping material layer is formed above the source/drain regions, followed by an anneal process to create stacking faults in these regions.
Another significant patent is "Depositing an etch stop layer before a dummy cap layer to improve gate performance." This improved method for fabricating a semiconductor device includes depositing a dielectric layer on a substrate, followed by a first cap layer on the dielectric layer. An etch stop layer is then deposited on the dielectric layer, and a dummy cap layer is placed on the etch stop layer to form a partial gate structure. This patent also describes a partially formed semiconductor device that includes these layers.
Career Highlights
Isabelle Ferain is currently employed at Globalfoundries Inc., where she continues to innovate in semiconductor technology. Her work has been instrumental in advancing the capabilities of modern electronic devices.
Collaborations
She collaborates with talented coworkers, including Johannes M Van Meer and Cuiqin Xu, contributing to a dynamic and innovative work environment.
Conclusion
Isabelle Ferain's contributions to semiconductor technology through her patents demonstrate her expertise and commitment to innovation. Her work continues to influence the development of advanced electronic devices.