The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2016

Filed:

Jun. 13, 2014
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Johannes M. van Meer, Delmar, NY (US);

Cuiqin Xu, Malta, NY (US);

Isabelle Ferain, Ballston Spa, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/324 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66492 (2013.01); H01L 21/266 (2013.01); H01L 21/324 (2013.01); H01L 29/7847 (2013.01); H01L 29/7848 (2013.01);
Abstract

One illustrative method disclosed herein includes, among other things, performing a source/drain extension ion implantation to form a doped extension implant region in the source/drain regions of the device, performing an ion implantation process on the source/drain regions with a Group VII material (e.g., fluorine), after performing the Group VII material ion implantation process, forming a capping material layer above the source/drain regions, and, with the capping material layer in position, performing an anneal process so as to form stacking faults in the source/drain regions.


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