Company Filing History:
Years Active: 2015-2018
Title: Innovations of Cuiqin Xu
Introduction
Cuiqin Xu is a notable inventor based in Malta, NY (US), recognized for his contributions to semiconductor technology. With a total of four patents to his name, Xu has made significant advancements in the field, particularly in methods that enhance the performance and efficiency of transistor devices.
Latest Patents
Xu's latest patents include innovative methods for preserving the seed layer on STI edges and improving epitaxial growth. One of his notable inventions involves a method of forming self-aligned STI regions that extend over portions of a silicon substrate. This method enables the subsequent formation of epitaxially grown embedded source/drain regions without the need for a lithography mask. The process includes forming a STI etch mask with laterally separated openings, creating shallow trenches in the silicon substrate, and forming oxide spacers on the sidewalls of these trenches. Additionally, Xu has developed stress memorization techniques for transistor devices, which involve nitrogen ion implantation to create stress regions in the substrate, enhancing the performance of NMOS transistor devices.
Career Highlights
Cuiqin Xu is currently employed at GlobalFoundries Inc., a leading semiconductor manufacturer. His work focuses on developing advanced technologies that improve the efficiency and reliability of semiconductor devices. Xu's innovative approaches have positioned him as a key player in the field of semiconductor research and development.
Collaborations
Xu has collaborated with several talented individuals in his field, including Jing Wan and Jin Ping Liu. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.
Conclusion
Cuiqin Xu's contributions to semiconductor technology through his patents and innovative methods have significantly impacted the industry. His work continues to pave the way for advancements in transistor devices and epitaxial growth techniques.
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