The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Jan. 24, 2014
Globalfoundries Inc., Grand Cayman, KY;
Jing Wan, Malta, NY (US);
Jin Ping Liu, Ballston Lake, NY (US);
Guillaume Bouche, Albany, NY (US);
Andy Wei, Queensbury, NY (US);
Lakshmanan H. Vanamurthy, Albany, NY (US);
Cuiqin Xu, Malta, NY (US);
Sridhar Kuchibhatla, Malta, NY (US);
Rama Kambhampati, Albany, NY (US);
Xiuyu Cai, Niskayuna, NY (US);
GLOBAL FOUNDRIES, Inc., Grand Cayman, KY;
Abstract
A method includes providing a gate structure having a gate, a first spacer along at least one side of the gate and an interlayer dielectric on at least one of the gate and the first spacer. The interlayer dielectric is removed to reveal the first spacer. The first spacer is removed and a second spacer is deposited on at least one side of the gate. The second spacer is formed of material having a lower dielectric constant than the first spacer.