Isabel Burdallo Bautista

Title: Isabel Burdallo Bautista: Innovator in Ion Sensor Technology

Introduction

Isabel Burdallo Bautista is a prominent inventor based in Barcelona, Spain. She has made significant contributions to the field of ion sensor technology, holding a total of 3 patents. Her innovative work focuses on the development of advanced sensors that enhance measurement accuracy and efficiency.

Latest Patents

Among her latest patents is an ion sensor based on differential measurement. This sensor comprises an ISFTET-REFET pair, where the REFET is defined by a structure composed of an ISFET covered by a microreservoir containing an internal reference solution. The design includes a first and a second ion-selective field effect transistor, an electrode, and a substrate that integrates the two transistors. Additionally, the sensor features connection tracks and an electrode, along with a structure adhered to the first ion-selective field effect transistor that creates a microreservoir on its gate. This microreservoir is equipped with a microchannel that connects it to the exterior and is filled with the reference solution.

Career Highlights

Isabel Burdallo Bautista is affiliated with the Consejo Superior de Investigaciones Científicas, where she continues to push the boundaries of research and innovation. Her work has garnered attention for its potential applications in various scientific fields.

Collaborations

Isabel has collaborated with notable colleagues, including Antoni Baldi Coll and Carlos Dominguez Horna. These partnerships have contributed to her success and the advancement of her research projects.

Conclusion

Isabel Burdallo Bautista stands out as a leading inventor in the realm of ion sensor technology. Her innovative patents and collaborative efforts reflect her commitment to advancing scientific knowledge and practical applications in this field.