Consejo Superior De Investigaciones Cientificas

Isabel Burdallo Bautista

Andreu Llobera Adan

César Fernández Sánchez

Carlos Dominguez Horna

Ángel Merlos Domingo

Alfredo Cadarso Busto

Ferrán Vera Gras

Antoni Baldi Coll

Cecilia Jimenéz Jorquera

Cecilia Jimenèz Jorquera

Carlos DOMÍNGUEZ Horna

ÁNgel Merlos Domingo

César FERNÁNDEZ SÁNCHEZ

Cecilia JIMÉNEZ Jorquera

Ion sensor based on differential measurement comprising an ISFTET-REFET pair wherein the REFET is defined by a structure composed of an ISFET covered by a microreservoir where an internal reference solution is contained. The sensor comprises a first and a second ion-selective field effect transistor, an electrode, a substrate on the surface whereof are integrated the two transistors, connection tracks and the electrode and a structure adhered on the first ion-selective field effect transistor which creates a microreservoir on the gate of said first transistor, with the microreservoir having a microchannel which connects the microreservoir with the exterior and the microreservoir being filled with the reference solution.

Ion sensor based on differential measurement, and production method

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Barcelona, Spain

Isabel Burdallo Bautista