The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2021
Filed:
Aug. 02, 2019
Consejo Superior DE Investigaciones Cientifícas (Csic), Madrid, ES;
Antoni Baldi Coll, Barcelona, ES;
Carlos Dominguez Horna, Barcelona, ES;
Cecilia Jimenéz Jorquera, Barcelona, ES;
César Fernández Sánchez, Barcelona, ES;
Andreu Llobera Adan, Barcelona, ES;
Ángel Merlos Domingo, Barcelona, ES;
Alfredo Cadarso Busto, Barcelona, ES;
Isabel Burdallo Bautista, Barcelona, ES;
Ferrán Vera Gras, Barcelona, ES;
Abstract
Ion sensor based on differential measurement comprising an ISFTET-REFET pair wherein the REFET is defined by a structure composed of an ISFET covered by a microreservoir where an internal reference solution is contained. The sensor comprises a first and a second ion-selective field effect transistor, an electrode, a substrate on the surface whereof are integrated the two transistors, connection tracks and the electrode and a structure adhered on the first ion-selective field effect transistor which creates a microreservoir on the gate of said first transistor, with the microreservoir having a microchannel which connects the microreservoir with the exterior and the microreservoir being filled with the reference solution.