Haifa, Israel

Irit Chen-Zamero

This inventor holds 2 USPTO granted patents. Top assignees: Tower Semiconductor Ltd., Yissum Research Development Company of the Hebrew University of Jerusalem Ltd.. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Irit Chen-Zamero. Retrieved from https://idiyas.com/inventor/irit-chen-zamero

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 2

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2014

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2 patents (USPTO):Explore Patents

Title: Irit Chen-Zamero: Innovator in Photovoltaic Technology

Introduction

Irit Chen-Zamero is a prominent inventor based in Haifa, Israel. She has made significant contributions to the field of photovoltaic technology, holding 2 patents that focus on innovative methods for producing photovoltaic devices. Her work is instrumental in advancing solar energy solutions.

Latest Patents

Irit's latest patents include a method for producing photovoltaic devices isolated by porous silicon. This method utilizes a minimally modified standard process flow to create lateral P-I-N light-sensitive diodes on silicon islands. These islands are isolated laterally by trenches and from an underlying support substrate by porous silicon regions. The process involves forming P+ and N+ doped regions in a P− epitaxial layer, etching trenches through the epitaxial layer into a P+ substrate, and creating a protective layer on the trench walls. This innovative approach allows for the formation of low-cost embedded photovoltaic arrays on CMOS IC devices or the production of high-voltage solar arrays for solar energy sources.

Another significant patent is for a photovoltaic device formed on porous silicon isolation. This device features lateral P-I-N light-sensitive diodes on a silicon island, which is surrounded by trenches that provide lateral isolation. The island is separated from the substrate by a porous silicon region, which enhances the device's efficiency by isolating the lower portions from the highly doped substrate. The trenches extend through the P− epitaxial material into the P+ substrate, facilitating self-limiting porous silicon formation and suppressing electron-hole recombination.

Career Highlights

Throughout her career, Irit has worked with notable organizations, including Yissum Research Development Company of the Hebrew University of Jerusalem and Tower Semiconductor. Her experience in these companies has contributed to her expertise in photovoltaic technology and innovation.

Collaborations

Irit has collaborated with esteemed colleagues such as Micha Asscher and Evgeny Pikhay. These partnerships have further enriched her research and development efforts in the field of solar energy.

Conclusion

Irit Chen-Zamero is a trailblazer in photovoltaic technology, with her patents paving the way for advancements in solar energy solutions. Her innovative methods and collaborations highlight her significant impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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