This inventor holds 3 USPTO granted patents. Top assignee: Infineon Technologies Ag. Active years: 2003-2006.
Company Filing History:
Years Active: 2003-2006
Title: Irene Sperl: Innovator in Semiconductor Technology
Introduction
Irene Sperl is a prominent inventor based in Dresden, Germany. She has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. Her work focuses on innovative methods that enhance the performance and efficiency of semiconductor devices.
Latest Patents
One of her latest patents is a method of forming a silicon dioxide layer. This invention refers to a technique for thermally oxidizing at least one monocrystalline silicon surface region on a semiconductor substrate. The silicon surface region has a curved surface, and the method includes providing a semiconductor substrate with this feature, roughening the surface to produce a layer of porous silicon, and thermally oxidizing the roughened monocrystalline silicon surface.
Another notable patent is for producing antifuse structures and antifuses. This method allows for the selective electrical connection of adjacent conductive regions. It involves applying a sacrificial layer to a first conductive region, patterning the sacrificial layer using a photolithographic method, applying a fuse layer, and then removing the sacrificial layer. A non-conductive layer is applied, and a conductive material is introduced in an opening in the non-conductive layer to form a second conductive region.
Career Highlights
Irene Sperl is currently employed at Infineon Technologies AG, a leading company in semiconductor solutions. Her work at Infineon has positioned her as a key player in advancing semiconductor technology.
Collaborations
Throughout her career, Irene has collaborated with notable colleagues, including Matthias Lehr and Uwe Schilling. These collaborations have contributed to her innovative work and the successful development of her patents.
Conclusion
Irene Sperl's contributions to semiconductor technology through her patents and work at Infineon Technologies AG highlight her role as a leading inventor in her field. Her innovative methods continue to influence the development of advanced semiconductor devices.