Infineon Technologies Ag

Irene Sperl

Albert Birner

Matthias Goldbach

Matthias Lehr

Klaus-Dieter Morhard

Veronika Polei

Uwe Schilling

Klaus Dieter Penner

The present invention refers to a method of forming a silicon dioxide layer by thermally oxidizing at least one monocrystalline silicon surface region on a semiconductor substrate. The silicon surface region has a curved surface. The method can include providing a semiconductor substrate having at least one monocrystalline silicon surface region having a curved surface, roughening the surface of the at least one monocrystalline silicon surface region to produce a layer of porous silicon, and thermally oxidizing the at least one roughened monocrystalline silicon surface.

Method of forming a silicon dioxide layer

A method for producing antifuse structures and antifuses by which adjacent conductive regions can be selectively electrically connected involve the application of a sacrificial layer to a first conductive region. The sacrificial layer is patterned with the aid of a photolithographic method. A fuse layer is applied and the sacrificial layer is then removed. A non-conductive layer is applied and a conductive material is introduced in an opening in the non-conductive layer for the purpose of forming a second conductive region.

Method for producing an antifuse and antifuse for the selective electrical connection of adjacent conductive regions

A method for increasing a trench capacitance in deep trench capacitors is described, in which, in a standard method, after the etching of the arsenic glass, a wet-chemical etching is additionally performed. An n&plus;-doped substrate results from the driving-out of the arsenic glass being widened in the trench, by about 20 nm, selectively both with respect to the lightly doped substrate and with respect to the oxide layer and with respect to the nitride layer.

Method for increasing the trench capacitance

Growing community of inventors

Dresden, Germany

Irene Sperl